SSM5H06FE 2007-11-01 1 silicon n channel mos type / silicon epitaxial schottky barrier diode SSM5H06FE dc-dc converter ? combined nch mosfet and schottky diode in one package. ? small package absolute maximum ratings (ta = 25c) mosfet characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 10 v dc i d 100 drain current pulse i dp (note 2) 200 ma drain power dissipation p d (note 1) 150 mw channel temperature t ch 150 c absolute maximum ratings (ta = 25c) schottky diode characteristics symbol rating unit maximum (peak) reverse voltage v rm 15 v reverse voltage v r 12 v average forward current i o 100 ma peak one cycle surge forward current (non-repetitive) i fsm 1 (50 hz) a junction temperature t j 125 c absolute maximum ratings (ta = 25c) mosfet, diode common characteristics symbol rating unit storage temperature t stg ?55~125 c operating temperature t opr (note 3) ?40~100 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.135 mm 2 5) note 2: the pulse width limited by max channel temperature. note 3: operating temperature limited by max channel temperat ure and max junction temperature. unit: mm 0.20.05 1.20.05 1.60.05 1.00.05 1 2 0.5 0.5 3 1.60.05 0.120.05 5 4 0.550.05 esv jedec ? jeita ? toshiba 2-2p1c weight: 3 mg (typ.) 1.gate 2.source 3.anode 4.cathode 5.drain 0.3 mm 0.45 mm
SSM5H06FE 2007-11-01 2 marking equivalent circuit handling precaution when handling individual devices (which are not yet mount ed on a circuit board), be sure that the environment is protected against electrostatic dischar ge. operators should wear anti-static clothing, and containers and other objects that come into direct contact with dev ices should be made of anti-static materials. the channel-to-ambient thermal resistance r th (ch-a) and the drain power dissipation p d vary according to the board material, board area, board thickness and pad area. when using this device, please take heat dissipation fully into account. 5 1 3 keh 2 4 5 13 2 4
SSM5H06FE 2007-11-01 3 mosfet electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 20 ? ? v drain cut-off current i dss v ds = 20 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.6 ? 1.1 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 10 ma 40 ? ? ms i d = 10 ma, v gs = 4 v ? 1.5 3.0 i d = 10 ma, v gs = 2.5 v ? 2.2 4.0 drain-source on-resistance r ds (on) i d = 1 ma, v gs = 1.5 v ? 5.2 15 input capacitance c iss v ds = 3 v, v gs = 0, f = 1 mhz ? 9.3 ? pf reverse transfer capacitance c rss v ds = 3 v, v gs = 0, f = 1 mhz ? 4.5 ? pf output capacitance c oss v ds = 3 v, v gs = 0, f = 1 mhz ? 9.8 ? pf turn-on time t on ? 70 ? switching time turn-off time t off v dd = 3 v, i d = 10 ma, v gs = 0~2.5 v ? 125 ? ns switching time test circuit precaution v th can be expressed as voltage between gate and source when the low operating current value is i d 100 a for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration when using the device. (c) v out (b) v in t on 90% 10% 0 v 2.5 v 10% 90% t off t r t f v dd v ds ( on ) v dd = 3 v duty < = 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd out in 2.5 v 0 10 s 50 r l (a) test circuit
SSM5H06FE 2007-11-01 4 schottky diode electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v f (1) i f = 1ma ? 0.18 ? v v f (2) i f = 5ma ? 0.23 0.30 v forward voltage v f (3) i f = 100ma ? 0.35 0.50 v reverse current i r v r = 12 v ? ? 22 a total capacitance c t v r = 0 v, f = 1 mhz ? 20 40 pf precaution the schottky barrier diodes of this product have large-reverse-current-leakage characteristics compared to other switching diodes. this curren t leakage and improper operating temperature or voltage may cause thermal runaway resulting in breakdow n. take forward and reverse loss into consideration in radiation design and safety design.
SSM5H06FE 2007-11-01 5 mosfet electrical characteristics graph i d ? v ds i d ? v gs r ds (on) ? i d r ds (on) ? v gs r ds (on) ? ta v th ? ta drain-source voltage v ds (v) gate-source voltage v gs (v) drain current i d (ma) gate-source voltage v gs (v) ambient temperature ta (c) ambient temperature ta (c) drain current i d (ma) drain current i d (ma) drain-source on-resistance r ds (on) ( ) gate threshold voltage v th (v) drain-source on-resistance r ds (on) ( ) 2.5 v v gs = 1.5 v 0 1 4 12 1000 10 2 6 8 100 common source ta = 25c 10 4 v 0 0 100 250 12 1.5 0.5 50 150 200 v gs = 1.3 v 1.5 1.7 1.9 common source ta = 25c 3 4 10 2.5 2.3 2.1 04 1 0 8 26 0 2 6 1 4 5 3 25c ta = 100c ? 25c common source i d = 10 ma 02 3 1 0.01 1 1000 0.1 10 100 ta = 100c common source v ds = 3 v ? 25c 25c 0 2 8 6 4 2.5 v, 10 ma v gs = 1.5 v, i d = 1 ma common source ? 25 50 150 125 0 75 25 100 4 v, 10 ma common source i d = 0.1 ma v ds = 3 v ? 25 50 150 125 0 75 25 100 0 0.4 2 1.2 1.6 0.8 drain-source on-resistance r ds (on) ( )
SSM5H06FE 2007-11-01 6 mosfet electrical characteristics graph ? y fs ? ? i d i dr ? v ds c ? v ds t ? i d p d ? ta drain current i d (ma) drain-source voltage v ds (v) drain-source voltage v ds (v) drain current i d (ma) ambient temperature ta (c) drain reverse current i dr (ma) forward transfer admittance ? y fs ? (ms) switching time t (ns) capacitance c (pf) drain power dissipation p d (mw) 1 10 100 1000 1 3 5 10 30 50 100 300 500 common source v ds = 3 v ta = 25c 0.1 1 10 100 10 30 50 100 300 500 1000 3000 5000 common source v dd = 3 v v gs = 0~2.5 v ta = 25c t r t on t f t off 0 0 100 250 160 40 50 150 200 80 120 mounted on fr4 board. (25.4 mm 25.4 mm 1.6 t cu pad: 0.135 mm 2 5) c iss c oss c rss common source v gs = 0 v f = 1 mhz ta = 25c 0.3 10 100 1 5 50 0.1 1 10 100 5 50 0.5 30 3 0.5 0.3 3 30 0 100 250 50 150 200 0 ? 1.4 ? 0.4 ? 0.2 ? 0.6 ? 0.8 ? 1 ? 1.2 common source v gs = 0 v ta = 25c g d s i dr
SSM5H06FE 2007-11-01 7 sbd electrical characteristics graph
SSM5H06FE 2007-11-01 8 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? 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